1999. 11. 30 1/2 semiconductor technical data mmbta42/43 epitaxial planar npn transistor revision no : 3 high voltage application. telephone application. features complementary to mmbta92/93. maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) *pulse test : pulse width # 300 s, duty cycle # 2.0% * : package mounted on 99.5% alumina 10 ' 8 ' 0.6mm. characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage mmbta42 v (br)cbo i c =100 a, i e =0 300 - - v MMBTA43 200 - - collector-emitter breakdown voltage mmbta42 v (be)ceo i c =1.0ma, i b =0 300 - - v MMBTA43 200 - - dc current gain * h fe i c =1.0ma, v ce =10v 40 - - i c =10ma, v ce =10v 40 - - i c =30ma, v ce =10v 40 - - collector-emitter saturation voltage v ce(sat) i c =20ma, i b =2.0ma - - 0.5 v base-emitter saturation voltage v be(sat) i c =20ma, i b =2.0ma - - 0.9 v transition frequency f t v ce =20v, i c =10ma, f=100mhz 50 - - mhz collector output capacitance mmbta42 c ob v cb =20v, i e =0, f=1mhz - - 3.0 pf MMBTA43 - - 4.0 characteristic symbol rating unit collector-base voltage mmbta42 v cbo 300 v MMBTA43 200 collector-emitter voltage mmbta42 v ceo 300 v MMBTA43 200 emitter-base voltage v ebo 5.0 v collector current i c 500 ma emitter current i e -500 ma collector power dissipation p c * 350 mw junction temperature t j 150 1 storage temperature t stg -55 150 1 type name marking mmbta42 MMBTA43 lot no. aax type name lot no. abx
1999. 11. 30 2/2 mmbta42/43 revision no : 3 10 transition frequency f (mhz) t 100 30 10 3 1 collector current i (ma) c f - i h - i c collector current i (ma) 1 3 30 100 fe dc current gain h 10 collector output capacitance 1 ob 3 1 0.3 0.1 reverse voltage v (v) r c - v saturation voltage be(sat), 0 30 10 3 1 collector current i (ma) c v v - i i - v ce collector emitter voltage v (v) 0.5 1 3 10 0.5 c collector current i (ma) fe c 10 550 30 50 100 300 t =125 c t =25 c t =-55 c v =10v ce j j j ob r c (pf) 10 30 100 200 3 5 10 30 50 100 c eb ob c be(sat), ce(sat) c v v (v) ce(sat) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 100 550 t =25 c j be(sat) v @i /i =10 cb ce v @v =10v be(on) b c v @i /i =10 ce(sat) tc 100 550 30 50 t =25 c v =20v f=20mhz j ce cce 30 100 500 1 3 10 30 100 300 1k curves apply below rated v ceo 10 s 1.0ms 100 s tc=25 c tc=25 c 100ms MMBTA43 mmbta42 ta=25 c 5.0
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